Тут можно читать онлайн книгу NARAIN ARORA (EN) - MOSFET MODELING FOR VLSI SIMULATION - бесплатно полную версию (целиком). Жанр книги: Иностранная литература. Вы можете прочесть полную версию (весь текст) онлайн без регистрации и смс на сайте Lib-King.Ru (Либ-Кинг) или прочитать краткое содержание, аннотацию (предисловие), описание и ознакомиться с отзывами (комментариями) о произведении.
MOSFET MODELING FOR VLSI SIMULATION - описание и краткое содержание, автор NARAIN ARORA (EN), читать бесплатно онлайн на сайте электронной библиотеки Lib-King.Ru.
A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.Contents:OverviewReview of Basic Semiconductor and pn Junction TheoryMOS Transistor Structure and OperationMOS CapacitorThreshold VoltageMOSFET DC ModelDynamic ModelModeling Hot-Carrier EffectsData Acquisition and Model Parameter MeasurementsModel Parameter Extraction Using Optimization MethodSPICE Diode and MOSFET Models and Their ParametersStatistical Modeling and Worst-Case Design ParametersReadership: Integrated circuit chip designers, device model developers and circuit simulators.
MOSFET MODELING FOR VLSI SIMULATION - читать книгу онлайн бесплатно, автор NARAIN ARORA (EN)